All MOSFET. WNM07N60F Datasheet

 

WNM07N60F Datasheet and Replacement


   Type Designator: WNM07N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
 

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WNM07N60F Datasheet (PDF)

 6.1. Size:1752K  willsemi
 wnm07n60-f.pdf pdf_icon

WNM07N60F

WNM07N60/WNM07N60FWNM07N60/WNM07N60F600V N-Channel MOSFETDescription FeaturesCThe WNM07N60/WNM07N60F is N-Channel 600V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

 7.1. Size:1606K  willsemi
 wnm07n65-f.pdf pdf_icon

WNM07N60F

WNM07N65/WNM07N65FWNM07N65/WNM07N65F650V N-Channel MOSFETDescription FeaturesCThe WNM07N65/WNM07N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

Datasheet: SST404 , SST405 , SST406 , WCM2001 , WCM2002 , WCM2007 , WCM2068 , WNM07N60 , IRF830 , WNM07N65 , WNM07N65F , WNM12N65 , WNM12N65F , WNM2016 , WNM2020 , WNM2021 , WNM2024 .

History: HCFL65R380 | SI2309CDS-T1-GE3

Keywords - WNM07N60F MOSFET datasheet

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