WNM07N65 Specs and Replacement
Type Designator: WNM07N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: TO220
WNM07N65 substitution
- MOSFET ⓘ Cross-Reference Search
WNM07N65 datasheet
wnm07n65-f.pdf
WNM07N65/WNM07N65F WNM07N65/WNM07N65F 650V N-Channel MOSFET Description Features C The WNM07N65/WNM07N65F is N-Channel 650V@TJ=25 enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate charge design to provide excellent RDS (ON) with low gate 100% avalanche tested charge. This device is suitable for use in p... See More ⇒
wnm07n60-f.pdf
WNM07N60/WNM07N60F WNM07N60/WNM07N60F 600V N-Channel MOSFET Description Features C The WNM07N60/WNM07N60F is N-Channel 600V@TJ=25 enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate charge design to provide excellent RDS (ON) with low gate 100% avalanche tested charge. This device is suitable for use in p... See More ⇒
Detailed specifications: SST405, SST406, WCM2001, WCM2002, WCM2007, WCM2068, WNM07N60, WNM07N60F, 8N60, WNM07N65F, WNM12N65, WNM12N65F, WNM2016, WNM2020, WNM2021, WNM2024, WNM2030
Keywords - WNM07N65 MOSFET specs
WNM07N65 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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