WNM07N65
MOSFET. Datasheet pdf. Equivalent
Type Designator: WNM07N65
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 156
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 7
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05
Ohm
Package:
TO220
WNM07N65
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WNM07N65
Datasheet (PDF)
0.1. Size:1606K willsemi
wnm07n65-f.pdf
WNM07N65/WNM07N65FWNM07N65/WNM07N65F650V N-Channel MOSFETDescription FeaturesCThe WNM07N65/WNM07N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p
7.1. Size:1752K willsemi
wnm07n60-f.pdf
WNM07N60/WNM07N60FWNM07N60/WNM07N60F600V N-Channel MOSFETDescription FeaturesCThe WNM07N60/WNM07N60F is N-Channel 600V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p
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