All MOSFET. WNMD2174 Datasheet

 

WNMD2174 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WNMD2174
   Marking Code: 74
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: CSP4L

 WNMD2174 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WNMD2174 Datasheet (PDF)

 ..1. Size:2133K  willsemi
 wnmd2174.pdf

WNMD2174 WNMD2174

WNMD2174 WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET www.sh-willsemi.com MOSFET2MOSFET1Vsss (V) Typ Rss(on) (m) Gate 1 Gate 219@ VGS=4.5V Gate20@ VGS=4.0V Protection12 Diode22@ VGS=3.1V 25@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Body DiodeDescriptions CSP 4L The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecti

 7.1. Size:1796K  willsemi
 wnmd2179.pdf

WNMD2174 WNMD2174

WNMD2179 WNMD2179 www.sh-willsemi.com Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) ( )0.0175@ VGS=4.5V0.0195@ VGS=3.1V200.0215@ VGS=2.5VESD Rating: 2000V HBM TSOT-23-6L Descriptions G1 D1/D2 G26 5 4The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

 7.2. Size:2262K  willsemi
 wnmd2173.pdf

WNMD2174 WNMD2174

WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m) MOSFET2MOSFET126@ VGS=4.5V Gate 1 Gate 227@ VGS=4.0V Gate20 Protection30@ VGS=3.1V Diode33@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Descriptions Body DiodeThe WNMD2173 is Dual N-Channel enhancement CSP 4L MOS Field Effect Transistor and connect

 7.3. Size:2437K  willsemi
 wnmd2171.pdf

WNMD2174 WNMD2174

WNMD2171 WNMD2171 www.sh-willsemi.com Dual N-Channel, 20V, 6A, Power MOSFET MOSFET2MOSFET1Vsss (V) Typ Rss(on) (m) Gate 1 Gate 236@ VGS=4.5V Gate38@ VGS=4.0V Protection20 Diode41@ VGS=3.1V 43@ VGS=2.5V ESD Rating:2000V HBM Source 1 Source 2Body DiodeDescriptions CSP 4L The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connec

 7.4. Size:1928K  willsemi
 wnmd2178.pdf

WNMD2174 WNMD2174

WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 326@ VGS=3.1V 429@ VGS=2.5V 2 ESD Rating:2000V HBM 1Descriptions Bottom View The WNMD2178 is Dual N-Channel enhancement DFN2X2-4L MOS Field Effect Transistor and connecting the Drains on the circuit board is not required becaus

 7.5. Size:971K  willsemi
 wnmd2176.pdf

WNMD2174 WNMD2174

WNMD2176 WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET www.sh-willsemi.com VDS (V) Typical RDS(on) (m) 56@ VGS=4.5V 20 76@ VGS=2.5V ESD Protected SOT-23-6L Descriptions D1 S1 D26 5 4The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitab

 7.6. Size:1648K  willsemi
 wnmd2172.pdf

WNMD2174 WNMD2174

WNMD2172 WNMD2172 Dual N-Channel, 20V, 7.0A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 20 0.017@ VGS=3.1V 0.018@ VGS=2.5V TSSOP-8L 0.021@ VGS=1.8V D1/D2 S2 S2 G2ESD Protected 8 7 6 5Descriptions The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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