WPM2015 MOSFET. Datasheet pdf. Equivalent
Type Designator: WPM2015
Marking Code: WT1*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.81 V
|Id|ⓘ - Maximum Drain Current: 2.2 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT23
WPM2015 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WPM2015 Datasheet (PDF)
wpm2015.pdf
WPM2015WPM2015Http://www.sh-willsemi.com Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( ) 0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsD3The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 12in DC-D
wpm2015.pdf
Product specificationWPM2015Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) Rds(on) ( )0.081@ VGS= 4.5V-200.103@ VGS= 2.5VSOT-23 DescriptionsDThe WPM2015 is P-Channel enhancement 3MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power s
wpm2015.pdf
SMD Type MOSFETP-Channel MOSFETWPM2015 (KPM2015)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 110m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 150m (VGS =-2.5V) Supper high density cell design1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Rating
wpm2015-ms.pdf
www.msksemi.comWPM2015-MSSemiconductorCompianceAPPLICATION Load Switch for Portable Devices DC/DC ConverterFEATURETrenchFET Power MOSFETIV(BR)DSS RDS(on)MAX D90 m@-4.5V-20 V-3 A110 m@-2.5V1. GATE2. SOURCE3. DRAINSOT-23-3LMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V -20DSVGate-So
wpm2015-3-tr.pdf
WPM2015-3/TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA
wpm2014.pdf
WPM2014WPM2014Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Rds(on) ()0.050 @ VGS=4.5V-20 0.063 @ VGS=2.5V0.074 @ VGS=1.8VDFN2x2-6LDescriptionsD DS6 5 4The WPM2014 is P-Channel enhancement MOS DField Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)Swith low gate charge. This
wpm2019.pdf
WPM2019 WPM2019 Http://www.sh-willsemi.com Single P-Channel, -20V, -0.73A, Power MOSFET VDS (V) Rds(on) ( )D0.480@ VGS= 4.5V-20 0.620@ VGS= 2.5VS0.780@ VGS= 1.8VGSOT-523 DescriptionsThe WPM2019 is P-Channel enhancement MOS D3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is sui
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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