WNM2023 Datasheet and Replacement

Product specificationWNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) ()0.038@ VGS=4.5V20 0.044@ VGS=2.5V0.052@ VGS=1.8VSOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

WNM2024 WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for us

WNM2020WNM2020Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )D0.220@ VGS=4.5V20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) Dwith low gate charge. This device is suitable for

WNM2021WNM2021Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5VD20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-323 DescriptionsDThe WNM2021 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

Product specificationWNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2 DC

Product specificationWNM2027N-Channel, 20V, 3.6A, Power MOSFET Rds(on) IdV(BR)DSS(Max. m) (A) 45 @ 4.5V 3.6 20 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 DDescriptions3The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

Product specificationWNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) Rds(on) ()0.027@ VGS=4.5V20 0.031@ VGS=2.5V0.036@ VGS=1.8VSOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2

Product specificationWNM2020N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( )0.220@ VGS=4.5V20 0.260@ VGS=2.5V0.320@ VGS=1.8VSOT-23 DescriptionsThe WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)D3with low gate charge. This device is suitable for use in DC-DC convers

SMD Type MOSFETN-Channel MOSFETWNM2020 SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 0.83 A1 2 RDS(ON) 310m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 360m (VGS = 2.5V) RDS(ON) 460m (VGS = 1.8V)1. Gate2. SourceD3. Drain31 2G S Absolute Maximum Ratings Ta = 2

WNM2021SOT-323 Plastic-Encapsulate MOSFETSW NM2021 N-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value

WNM2020-3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

WNM2021www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECA