All MOSFET. CM12N60AF Datasheet

 

CM12N60AF Datasheet and Replacement


   Type Designator: CM12N60AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220FH
 

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CM12N60AF Datasheet (PDF)

 ..1. Size:126K  jdsemi
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CM12N60AF

RCM12N60AF www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1

 6.1. Size:123K  jdsemi
 cm12n60a to220a.pdf pdf_icon

CM12N60AF

RCM12N60A www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3

 8.1. Size:125K  jdsemi
 cm12n65af.pdf pdf_icon

CM12N60AF

RCM12N65AF www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12

 8.2. Size:123K  jdsemi
 cm12n65a to220a.pdf pdf_icon

CM12N60AF

RCM12N65A www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 3

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