IRF620FI MOSFET PDF: N-Ch, 200V, 4A. Full specification with pinout and replacement list

8.1. Size:881K 1
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8.2. Size:182K international rectifier
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8.3. Size:162K international rectifier
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IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Qgs (nC) 3.0 Repetitive Avalanche Rated Qgd (nC) 7.9 Fast Switching Simple Drive Requirements Configuratio... See More ⇒

8.4. Size:886K international rectifier
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PD - 94870 IRF620PbF Lead-Free 12/5/03 Document Number 91027 www.vishay.com 1 IRF620PbF Document Number 91027 www.vishay.com 2 IRF620PbF Document Number 91027 www.vishay.com 3 IRF620PbF Document Number 91027 www.vishay.com 4 IRF620PbF Document Number 91027 www.vishay.com 5 IRF620PbF Document Number 91027 www.vishay.com 6 IRF620PbF TO-220AB Package Outline ... See More ⇒

8.5. Size:247K international rectifier
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PD - 97500A IRF6201PbF HEXFET Power MOSFET VDS 20 V RDS(on) max 2.45 m (@VGS = 4.5V) RDS(on) max 2.75 m (@VGS = 2.5V) Qg (typical) 130 nC SO-8 ID 27 A (@TA = 25 C) Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switch Features and Benefits Features Benefits Low RDSon ( 2.45m @ Vgs = 4.5V) Lower ... See More ⇒

8.6. Size:873K international rectifier
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8.7. Size:202K international rectifier
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IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒

8.8. Size:184K st
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IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF620 200 V ... See More ⇒

8.9. Size:508K st
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8.10. Size:875K fairchild semi
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8.11. Size:931K samsung
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Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

8.12. Size:152K vishay
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IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒