CM1N60C Specs and Replacement
Type Designator: CM1N60C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
Package: TO251
CM1N60C substitution
- MOSFET ⓘ Cross-Reference Search
CM1N60C datasheet
cm1n60c.pdf
R C16C MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 3 TO-251 4 ... See More ⇒
cm1n60s.pdf
R CM1N60S www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS ... See More ⇒
Detailed specifications: CM13N50F, CM140N04, CM15N50, CM18N20, CM18N50F, CM18N50P, 1D5N60, CM1N60, IRF640, CM1N60S, CM1N70, CM20N50, CM20N50F, CM20N50P, CM20N50PZ, CM20N60, CM20N60F
Keywords - CM1N60C MOSFET specs
CM1N60C cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP9435GG | AP4502GM | NTTFS4939NTAG | DG2N65-252 | 2SK1237 | CM20N50F | 2SJ479L
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