CM20N50PZ Datasheet and Replacement
Type Designator: CM20N50PZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO3PB
CM20N50PZ substitution
CM20N50PZ Datasheet (PDF)
cm20n50pz.pdf
RC2N0ZM05P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 121 2 33
cm20n50p.pdf
RCM20N50P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 33
cm20n50f.pdf
RCM20N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 23
cm20n50.pdf
RCM20N50 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 3
Datasheet: 1D5N60 , CM1N60 , CM1N60C , CM1N60S , CM1N70 , CM20N50 , CM20N50F , CM20N50P , IRF3710 , CM20N60 , CM20N60F , CM20N60P , CM220N04 , CM25N06 , CM2N60 , CM2N60C , CM2N60F .
History: SWYN4N65DD | 2SK2461 | IXFP4N100Q | VMO1600-02P | SI4401DDY | 2SJ196 | G110N06
Keywords - CM20N50PZ MOSFET datasheet
CM20N50PZ cross reference
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History: SWYN4N65DD | 2SK2461 | IXFP4N100Q | VMO1600-02P | SI4401DDY | 2SJ196 | G110N06
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