CM4N60 Datasheet and Replacement
Type Designator: CM4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220A
- MOSFET Cross-Reference Search
CM4N60 Datasheet (PDF)
cm4n60.pdf
RCM4N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm4n60c.pdf
RCM4N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm4n60f.pdf
RCM4N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 2 1 23
cm4n60c to251.pdf
RCM4N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BUK7Y7R6-40E | TSM4424CS | LKK47-06C5 | ZXMN3A02X8TA | AUIRFSL8403 | BRCS200P03DP | IRFB3004GPBF
Keywords - CM4N60 MOSFET datasheet
CM4N60 cross reference
CM4N60 equivalent finder
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History: BUK7Y7R6-40E | TSM4424CS | LKK47-06C5 | ZXMN3A02X8TA | AUIRFSL8403 | BRCS200P03DP | IRFB3004GPBF
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