CM4N60F Datasheet and Replacement
Type Designator: CM4N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220FH
CM4N60F substitution
CM4N60F Datasheet (PDF)
cm4n60f.pdf
RCM4N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 2 1 23
cm4n60c.pdf
RCM4N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm4n60c to251.pdf
RCM4N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm4n60.pdf
RCM4N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
Datasheet: CM2N65F , CM2N80C , CM2N80F , CM30N40PZ , CM3N50C , CM40N20 , CM4N60 , CM4N60C , IRF4905 , CM4N65C , CM4N65F , CM50N06 , CM55N06 , CM5N50 , CM5N50C , CM5N50F , CM5N80F .
Keywords - CM4N60F MOSFET datasheet
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