IRF6215 Datasheet. Specs and Replacement

Type Designator: IRF6215  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO220AB

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IRF6215 substitution

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IRF6215 datasheet

 ..1. Size:177K  international rectifier
irf6215pbf.pdf pdf_icon

IRF6215

PD - 94817 IRF6215PbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = -150V Fast Switching P-Channel RDS(on) = 0.29 Fully Avalanche Rated G Lead-Free ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe... See More ⇒

 ..2. Size:125K  international rectifier
irf6215.pdf pdf_icon

IRF6215

PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -150V 175 C Operating Temperature Fast Switching RDS(on) = 0.29 P-Channel G Fully Avalanche Rated ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area... See More ⇒

 0.1. Size:182K  international rectifier
irf6215s.pdf pdf_icon

IRF6215

PD - 91643 IRF6215S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF6215S) VDSS = -150V Low-profile through-hole (IRF6215L) 175 C Operating Temperature RDS(on) = 0.29 Fast Switching G P-Channel ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ... See More ⇒

 0.2. Size:270K  international rectifier
auirf6215.pdf pdf_icon

IRF6215

PD - 97564 AUTOMOTIVE GRADE AUIRF6215 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l P-Channel D V(BR)DSS -150V l Dynamic dv/dt Rating RDS(on) max. 0.29 l 175 C Operating Temperature G l Fast Switching ID -13A S l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified D D... See More ⇒

Detailed specifications: IRF614A, IRF614S, IRF615, IRF620, IRF620A, IRF620FI, IRF620S, IRF621, AON7410, IRF6215L, IRF6215S, IRF622, IRF623, IRF624, IRF624A, IRF624S, IRF625

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.