All MOSFET. IRF6215 Datasheet

 

IRF6215 Datasheet and Replacement


   Type Designator: IRF6215
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 66(max) nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO220AB
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IRF6215 Datasheet (PDF)

 ..1. Size:177K  international rectifier
irf6215pbf.pdf pdf_icon

IRF6215

PD - 94817IRF6215PbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = -150V Fast Switching P-ChannelRDS(on) = 0.29 Fully Avalanche RatedG Lead-FreeID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 ..2. Size:125K  international rectifier
irf6215.pdf pdf_icon

IRF6215

PD - 91479BIRF6215HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.29 P-ChannelG Fully Avalanche RatedID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

 0.1. Size:182K  international rectifier
irf6215s.pdf pdf_icon

IRF6215

PD - 91643IRF6215S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF6215S)VDSS = -150V Low-profile through-hole (IRF6215L) 175C Operating TemperatureRDS(on) = 0.29 Fast SwitchingG P-ChannelID = -13A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 0.2. Size:270K  international rectifier
auirf6215.pdf pdf_icon

IRF6215

PD - 97564AUTOMOTIVE GRADEAUIRF6215Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel P-Channel DV(BR)DSS-150Vl Dynamic dv/dt RatingRDS(on) max.0.29l 175C Operating TemperatureGl Fast SwitchingID-13ASl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive QualifiedDD

Datasheet: IRF614A , IRF614S , IRF615 , IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 , 5N60 , IRF6215L , IRF6215S , IRF622 , IRF623 , IRF624 , IRF624A , IRF624S , IRF625 .

Keywords - IRF6215 MOSFET datasheet

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