CM8N50F Datasheet and Replacement
Type Designator: CM8N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220FH
- MOSFET Cross-Reference Search
CM8N50F Datasheet (PDF)
cm8n50f.pdf

RCM8N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 23
cm8n50 to220a.pdf

RCM8N50 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 3
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NTD4855N-1G | SPD04N60S5 | AP6679GI-HF | DM12N65C | FCPF7N60YDTU | SM6A12NSFP
Keywords - CM8N50F MOSFET datasheet
CM8N50F cross reference
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History: NTD4855N-1G | SPD04N60S5 | AP6679GI-HF | DM12N65C | FCPF7N60YDTU | SM6A12NSFP



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