All MOSFET. CM8N60F Datasheet

 

CM8N60F Datasheet and Replacement


   Type Designator: CM8N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO220FH
 

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CM8N60F Datasheet (PDF)

 ..1. Size:126K  jdsemi
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CM8N60F

RCM8N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1

 8.1. Size:122K  jdsemi
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CM8N60F

RCM8N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3

 9.1. Size:147K  jdsemi
 cm8n65f.pdf pdf_icon

CM8N60F

RCM8N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS

Datasheet: CM7N60 , CM7N60F , CM7N65F , CM84N06 , CM8N06C , CM8N50 , CM8N50F , CM8N60 , P60NF06 , CM8N65F , CM8N80 , CM8N80F , CM9N20 , CM9N90PZ , CS100N08A8 , CS100N03B8 , CS100N03FB9 .

History: AP9970GW-HF | P5002CMG | H04N65E | HGB025N06S | AP2304AGN | SVG063R5NL5

Keywords - CM8N60F MOSFET datasheet

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