CM8N65F Specs and Replacement
Type Designator: CM8N65F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220FH
CM8N65F substitution
- MOSFET ⓘ Cross-Reference Search
CM8N65F datasheet
cm8n65f.pdf
R CM8N65F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS ... See More ⇒
cm8n60f.pdf
R CM8N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1 ... See More ⇒
Detailed specifications: CM7N60F, CM7N65F, CM84N06, CM8N06C, CM8N50, CM8N50F, CM8N60, CM8N60F, BS170, CM8N80, CM8N80F, CM9N20, CM9N90PZ, CS100N08A8, CS100N03B8, CS100N03FB9, CS10N50A8R
Keywords - CM8N65F MOSFET specs
CM8N65F cross reference
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