CS10N50FA9R Specs and Replacement
Type Designator: CS10N50FA9R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ -
Output Capacitance: 154 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F
- MOSFET ⓘ Cross-Reference Search
CS10N50FA9R datasheet
6.1. Size:272K crhj
cs10n50f a9r.pdf 
Silicon N-Channel Power MOSFET R CS10N50F A9R General Description VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
7.1. Size:266K crhj
cs10n50 a8r.pdf
Silicon N-Channel Power MOSFET R CS10N50 A8R General Description VDSS 500 V CS10N50 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
9.1. Size:953K jilin sino
jcs10n80fc jcs10n80gdc.pdf
N R N-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS Rdson Vgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch... See More ⇒
9.2. Size:1202K jilin sino
jcs10n80f.pdf
N R N-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS Rdson Vgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch... See More ⇒
9.4. Size:1369K jilin sino
jcs10n60f jcs10n60c.pdf
R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES ... See More ⇒
9.5. Size:1843K jilin sino
jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf
N R N-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10V Qg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒
9.6. Size:1484K jilin sino
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf
N R N-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE... See More ⇒
9.7. Size:2011K jilin sino
jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf
N R N-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE... See More ⇒
9.9. Size:741K jilin sino
jcs10n65f jcs10n65c jcs10n65b jcs10n65s.pdf
N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max 0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒
9.11. Size:1014K blue-rocket-elect
brcs10n60aa.pdf
BRCS10N60AA Rev.A Sep.-2017 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici... See More ⇒
9.13. Size:356K crhj
cs10n65 a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒
9.14. Size:348K crhj
cs10n70f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒
9.15. Size:273K crhj
cs10n65f a9r.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒
9.16. Size:304K crhj
cs10n80 and.pdf
Silicon N-Channel Power MOSFET R CS10N80 AND General Description VDSS 800 V CS10N80 AND, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
9.17. Size:351K crhj
cs10n65f a9hd.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario... See More ⇒
9.18. Size:546K crhj
cs10n80f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
9.19. Size:266K crhj
cs10n60 a8r.pdf
Silicon N-Channel Power MOSFET R CS10N60 A8R General Description VDSS 600 V CS10N60 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
9.20. Size:351K crhj
cs10n60f a9hd.pdf
Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒
9.21. Size:267K crhj
cs10n65 a8r.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8R General Description VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
9.22. Size:350K crhj
cs10n70 a8d.pdf
Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
9.23. Size:353K crhj
cs10n60 a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N60 A8HD VDSS 600 V General Description ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
9.24. Size:272K crhj
cs10n60f a9r.pdf
Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒
9.25. Size:547K crhj
cs10n80 a8d.pdf
Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
9.26. Size:2795K citcorp
cs10n60fa9hd.pdf
CS10N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S E... See More ⇒
9.27. Size:280K lzg
cs10n60f.pdf
BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25... See More ⇒
9.28. Size:227K wuxi china
cs10n65fa9hd.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario... See More ⇒
9.29. Size:353K wuxi china
cs10n60a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N60 A8HD VDSS 600 V General Description ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
9.30. Size:224K wuxi china
cs10n70fa9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒
9.31. Size:282K wuxi china
cs10n80fa9d.pdf
Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
9.32. Size:281K wuxi china
cs10n60fa9hd.pdf
Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
9.33. Size:272K wuxi china
cs10n60fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒
9.34. Size:350K wuxi china
cs10n70a8d.pdf
Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
9.35. Size:356K wuxi china
cs10n65a8hd.pdf
Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒
9.36. Size:387K wuxi china
cs10n70fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9R General Description VDSS 700 V CS10N70F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒
9.37. Size:544K wuxi china
cs10n80a8d.pdf
Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
9.38. Size:273K wuxi china
cs10n65fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒
9.39. Size:401K convert
cs10n65ff.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N65FF 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N65FF TO-220F CS10N65FF Absolute... See More ⇒
9.40. Size:804K convert
cs10n80f cs10n80p cs10n80v cs10n80w.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N80F, CS10N80P,CS10N80V,CS10N80W 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N80F T... See More ⇒
9.41. Size:674K convert
cs10n60f cs10n60p.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N60F,CS10N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N60F TO-220F CS10N60F CS... See More ⇒
9.42. Size:706K convert
cs10n65f cs10n65p cs10n65k.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N65F,CS10N65P,CS10N65K 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N65F TO-220F CS1... See More ⇒
9.43. Size:487K convert
cs10n90v.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N90V 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N90V TO-3P CS10N90V Absolute Maxi... See More ⇒
9.44. Size:418K convert
cs10n60f cs10n60p cs1060k.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N60F,CS10N60P,CS1060K 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N60F TO-220F CS10... See More ⇒
Detailed specifications: CM8N80, CM8N80F, CM9N20, CM9N90PZ, CS100N08A8, CS100N03B8, CS100N03FB9, CS10N50A8R, AO3407, IRLR9343TR, CS10N60A8R, HGE055NE4A, CS10N60FA9R, VBA5638, CS10N65A8R, GN10N65A4, CS10N65FA9R
Keywords - CS10N50FA9R MOSFET specs
CS10N50FA9R cross reference
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CS10N50FA9R replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
