All MOSFET. CS10N65F_A9R Datasheet

 

CS10N65F_A9R MOSFET. Datasheet pdf. Equivalent

Type Designator: CS10N65F_A9R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 128 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO220F

CS10N65F_A9R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS10N65F_A9R Datasheet (PDF)

1.1. cs10n65f a9r.pdf Size:273K _crhj

CS10N65F_A9R
CS10N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N65F A9R General Description: VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.2. cs10n65f a9hd.pdf Size:351K _crhj

CS10N65F_A9R
CS10N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N65F A9HD VDSS 650 V General Description: ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 3.1. cs10n65 a8hd.pdf Size:356K _crhj

CS10N65F_A9R
CS10N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N65 A8HD VDSS 650 V General Description: ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

3.2. cs10n65 a8r.pdf Size:267K _crhj

CS10N65F_A9R
CS10N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N65 A8R General Description: VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: CS10N50F_A9R , CS10N60_A8HD , CS10N60_A8R , CS10N60F_A9HD , CS10N60F_A9R , CS10N65_A8HD , CS10N65_A8R , CS10N65F_A9HD , 2SK2611 , CS10N70_A8D , CS10N70F_A9D , CS10N80_A8D , CS10N80_AND , CS10N80F_A9D , CS12N60_A8H , CS12N60_A8HD , CS12N60_A8R .

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