CS12N60_A8H MOSFET. Datasheet pdf. Equivalent
Type Designator: CS12N60_A8H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 140 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm
Package: TO220AB
CS12N60_A8H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS12N60_A8H Datasheet (PDF)
1.1. cs12n60 a8r.pdf 
Size:266K _crhj
Silicon N-Channel Power MOSFET R ○ CS12N60 A8R General Description： VDSS 600 V CS12N60 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
1.2. cs12n60 a8hd.pdf Size:356K _crhj
Silicon N-Channel Power MOSFET R ○ CS12N60 A8HD VDSS 600 V XGeneral Description： ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
1.3. cs12n60 a8h.pdf Size:352K _crhj
Silicon N-Channel Power MOSFET R ○ CS12N60 A8H VDSS 600 V General Description： ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Datasheet: CS10N65_A8R , CS10N65F_A9HD , CS10N65F_A9R , CS10N70_A8D , CS10N70F_A9D , CS10N80_A8D , CS10N80_AND , CS10N80F_A9D , IRF9540N , CS12N60_A8HD , CS12N60_A8R , CS12N60F_A9H , CS12N60F_A9HD , CS12N60F_A9R , CS12N65_A8H , CS12N65_A8R , CS12N65F_A9H .
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