All MOSFET. CS12N70_A8H Datasheet

 

CS12N70_A8H MOSFET. Datasheet pdf. Equivalent

Type Designator: CS12N70_A8H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 179 pF

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO220AB

CS12N70_A8H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS12N70_A8H Datasheet (PDF)

1.1. cs12n70 a8h.pdf Size:222K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N70 A8H VDSS 700 V General Description: ID 12 A CS12N70 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.64 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.1. cs12n60f.pdf Size:252K _update_mosfet

CS12N70_A8H
CS12N70_A8H

BRF12N60 N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑结构的电子节能灯。 Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. 特点: 低栅电荷,反向传输电容低,开关

5.2. cs12n10.pdf Size:124K _update_mosfet

CS12N70_A8H

CS12N10 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 75 W 线性降低系数 0.6 W/℃ ID (VGS=10V,TC=25℃) 12 A 极 限 IDM 30 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 1.25 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 100 V RDS on) VGS=10V,ID=45A 0.18 Ω ( VGS th) VDS=VGS,ID=0.25mA

 5.3. cs12n65fa9h.pdf Size:342K _update_mosfet

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N65F A9H VDSS 650 V General Description: ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.4. cs12n60fa9h.pdf Size:251K _update_mosfet

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 5.5. cs12n65a8h.pdf Size:346K _update_mosfet

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N65 A8H VDSS 650 V General Description: ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.6. cs12n60.pdf Size:253K _update_mosfet

CS12N70_A8H
CS12N70_A8H

BR12N60(CS12N60) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑结构的电子节能灯。 Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. 特点: 低栅电荷,反向传输电容低,

5.7. cs12n60a8hd.pdf Size:356K _update_mosfet

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60 A8HD VDSS 600 V XGeneral Description: ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.8. cs12n60fa9hd.pdf Size:354K _update_mosfet

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

5.9. cs12n60a8h.pdf Size:352K _update_mosfet

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60 A8H VDSS 600 V General Description: ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.10. hcs12nk65v.pdf Size:417K _update_mosfet

CS12N70_A8H
CS12N70_A8H

Apr 2014 BVDSS = 650 V RDS(on) typ = 0.34 HCS12NK65V ID = 12 A 650V N-Channel Super Junction MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Ope

5.11. jcs12n60t.pdf Size:1072K _jilin_sino

CS12N70_A8H
CS12N70_A8H

N-CHANNEL MOSFET R JCS12N60T Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65Ω (@Vgs=10V) 39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100% avalanche tested Improved dv/dt capability

5.12. cs12n60 a8r.pdf Size:266K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60 A8R General Description: VDSS 600 V CS12N60 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.13. cs12n60f a9hd.pdf Size:354K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

5.14. cs12n60 a8hd.pdf Size:356K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60 A8HD VDSS 600 V XGeneral Description: ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.15. cs12n60 a8h.pdf Size:352K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60 A8H VDSS 600 V General Description: ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.16. cs12n60f a9h.pdf Size:252K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.17. cs12n65f a9h.pdf Size:342K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N65F A9H VDSS 650 V General Description: ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.18. cs12n65 a8r.pdf Size:271K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N65 A8R General Description: VDSS 650 V CS12N65 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.19. cs12n65f a9r.pdf Size:269K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N65F A9R General Description: VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.20. cs12n65 a8h.pdf Size:346K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N65 A8H VDSS 650 V General Description: ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.21. cs12n60f a9r.pdf Size:270K _crhj

CS12N70_A8H
CS12N70_A8H

Silicon N-Channel Power MOSFET R ○ CS12N60F A9R General Description: VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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