CS13N50A8R
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS13N50A8R
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 195
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO220AB
CS13N50A8R
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS13N50A8R
Datasheet (PDF)
5.1. Size:357K wuxi china
cs13n50a8h.pdf 
Silicon N-Channel Power MOSFET R CS13N50 A8H VDSS 500 V General Description ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.1. Size:1016K 1
jcs13n50ft.pdf
N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR
7.2. Size:1655K jilin sino
jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf
N N- CHANNEL MOSFET RJCS13N50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson@Vgs=10V 0.49 Qg 27 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES
7.3. Size:1016K jilin sino
jcs13n50ft.pdf
N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR
7.4. Size:489K crhj
cs13n50 a8d.pdf
Silicon N-Channel Power MOSFET R CS13N50 A8D VDSS 500 V General Description ID 13 A CS13N50 A8D, the silicon N-channel Enhanced PD (TC=25) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
7.5. Size:486K crhj
cs13n50f a9d.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9D VDSS 500 V General Description ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
7.6. Size:265K crhj
cs13n50 a8r.pdf
Silicon N-Channel Power MOSFET R CS13N50 A8R General Description VDSS 500 V CS13N50 A8R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
7.7. Size:357K crhj
cs13n50 a8h.pdf
Silicon N-Channel Power MOSFET R CS13N50 A8H VDSS 500 V General Description ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.8. Size:268K crhj
cs13n50f a9r.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
7.9. Size:346K crhj
cs13n50f a9h.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
7.10. Size:226K wuxi china
cs13n50fa9h.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
7.11. Size:268K wuxi china
cs13n50fa9r.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
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