2N7082 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7082
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 18 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23 nC
Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
Package: TO257
2N7082 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7082 Datasheet (PDF)
9.1. 2n708.pdf 
Size:285K _rca
9.2. 2n7081-220m-iso 2n7081.pdf Size:14K _semelab
2N7081–220M–ISO MECHANICAL DATA Dimensions in mm(inches) N–CHANNEL POWER MOSFET 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) VDSS 100V 3.56 (0.140) Dia. 3.81 (0.150) ID(cont) 11A Ω RDS(on) 0.15Ω 1 2 3 FEATURES • TO–220 ISOLATED HERMETIC PACKAGE • LOW RDS(ON) 0.64 (0.025) Dia. 0.89 (0.035) • SIMPLE DRIVE REQUIREMENTS
9.3. 2n7086.pdf Size:14K _semelab
2N7086 MECHANICAL DATA Dimensions in mm(inches) N–CHANNEL ENHANCEMENT MODE 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) TRANSISTOR 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) V(BR)DSS 200V 1 2 3 ID(A) 14A Ω RDS(on) 0.16Ω 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120) BSC BSC FEATURES • TO257AB HERMETIC PACKAGE FOR HIGH RELIABILI
9.4. 2n7085.pdf Size:16K _semelab
2N7085 MECHANICAL DATA Dimensions in mm(inches) N–CHANNEL ENHANCEMENT MODE 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) TRANSISTOR 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) V(BR)DSS 100V 1 2 3 ID(A) 20A RDS(on) 0.075 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120) BSC BSC FEATURES • TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPL
9.5. 2n7089.pdf Size:215K _temic
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Datasheet: 2N7074 , 2N7075 , 2N7076 , 2N7077 , 2N7078 , 2N7079 , 2N7080 , 2N7081 , IRF1405 , 2N7085 , 2N7086 , 2N7100 , 2N7101 , 2N7102 , 2N7103 , 2N7104 , 2N7105 .
