All MOSFET. VBA1328 Datasheet

 

VBA1328 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBA1328
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.8 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SO8

 VBA1328 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBA1328 Datasheet (PDF)

 ..1. Size:459K  cn vbsemi
 vba1328.pdf

VBA1328 VBA1328

VBA1328www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.032 at VGS = 10 V 6.8 TrenchFET Power MOSFET30 9.2 nC Compliant to RoHS Directive 2002/95/EC0.045 at VGS = 4.5 V 5.8APPLICATIONS Notebook Load SwitchD Low Current dc-to-dcSO-8 SD

 9.1. Size:816K  cn vbsemi
 vba1310s.pdf

VBA1328 VBA1328

VBA1310Swww.VBsemi.comN-Channel Enhancement Mode Field Effect Transistor with Schottky DiodeGeneral Description FeaturesThe VBA1310S uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 12 A (VGS = 10V)body diode characteristics.This device is suitable for RDS(ON)

 9.2. Size:445K  cn vbsemi
 vba1311.pdf

VBA1328 VBA1328

VBA1311www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 9.3. Size:437K  cn vbsemi
 vba1303.pdf

VBA1328 VBA1328

VBA1303www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.003 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.004 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

 9.4. Size:481K  cn vbsemi
 vba1302.pdf

VBA1328 VBA1328

VBA1302www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0020 at VGS = 10 V 25 TrenchFET Gen II300.0030 at VGS = 4.5 V Ultra Low On-Resistance Using High 22Density TrenchFET Power MOSFET TechnologyAPPLICATIONS Synchronous Buck Low-Side- Notebook-

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMO80R480S

 

 
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