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VB2355 Specs and Replacement

Type Designator: VB2355

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

VB2355 substitution

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VB2355 datasheet

 ..1. Size:571K  cn vbsemi
 vb2355.pdf pdf_icon

VB2355

VB2355 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)... See More ⇒

Detailed specifications: CS15N50FA9R, VBA1328, CS16N60FA9H, VBA1104N, VBA1158N, VBA1101M, CS5N60A4H, CS55N06A4, IRFZ44, VB264K, VB1695, VB2103K, SI2318CDS-T1-GE3, SI2318DS-T1-GE3, SI2319CDS-T1-GE3, SI2319DS-T1-GE3, SI2323CDS-T1-GE3

Keywords - VB2355 MOSFET specs

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