All MOSFET. VB2355 Datasheet

 

VB2355 Datasheet and Replacement


   Type Designator: VB2355
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT23
 

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VB2355 Datasheet (PDF)

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VB2355

VB2355www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

Datasheet: CS15N50FA9R , VBA1328 , CS16N60FA9H , VBA1104N , VBA1158N , VBA1101M , CS5N60A4H , CS55N06A4 , IRFZ44 , VB264K , VB1695 , VB2103K , SI2318CDS-T1-GE3 , SI2318DS-T1-GE3 , SI2319CDS-T1-GE3 , SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 .

History: 5N60AF | MMBF5459 | SFF60P05ZDB | CS1N60D | NCEP02515F | NTMFS4851N | 50N06AF

Keywords - VB2355 MOSFET datasheet

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