SI2323DDS-T1-GE3 PDF and Equivalents Search

 

SI2323DDS-T1-GE3 Specs and Replacement

Type Designator: SI2323DDS-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

SI2323DDS-T1-GE3 substitution

- MOSFET ⓘ Cross-Reference Search

 

SI2323DDS-T1-GE3 datasheet

 0.1. Size:868K  cn vbsemi
si2323dds-t1-ge3.pdf pdf_icon

SI2323DDS-T1-GE3

SI2323DDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter ... See More ⇒

 5.1. Size:211K  vishay
si2323dds.pdf pdf_icon

SI2323DDS-T1-GE3

Si2323DDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) 100 % Rg Tested Material categorization 0.039 at VGS = - 4.5 V - 5.3 For definitions of compliance please see - 20 0.050 at VGS = - 2.5 V - 4.7 13.6 nC www.vishay.com/doc?99912 0.075 at VGS = - 1.8 V - 3.8 APPLICATION... See More ⇒

 7.1. Size:188K  vishay
si2323ds.pdf pdf_icon

SI2323DDS-T1-GE3

Si2323DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.039 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET 0.052 at VGS = - 2.5 V - 20 - 4.1 0.068 at VGS = - 1.8 V - 3.5 APPLICATIONS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View S... See More ⇒

 7.2. Size:1691K  kexin
si2323ds.pdf pdf_icon

SI2323DDS-T1-GE3

SMD Type MOSFET P-Channel Enhancement MOSFET SI2323DS (KI2323DS) SOT-23 Unit mm Features 2.9+0.1 -0.1 +0.1 0.4 -0.1 VDS (V) =-20V 3 ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) RDS(ON) 52m (VGS =-2.5V) 1 2 RDS(ON) 68m (VGS =-1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain A... See More ⇒

Detailed specifications: VB264K, VB1695, VB2103K, SI2318CDS-T1-GE3, SI2318DS-T1-GE3, SI2319CDS-T1-GE3, SI2319DS-T1-GE3, SI2323CDS-T1-GE3, IRF3710, SI2323DS-T1, SI2338DS-T1-GE3, CS4N80FA9HD, VB2290, CS4N80A4HD-G, VB8338, CS4N80A3HD-G, CS4N70FA9R

Keywords - SI2323DDS-T1-GE3 MOSFET specs

 SI2323DDS-T1-GE3 cross reference

 SI2323DDS-T1-GE3 equivalent finder

 SI2323DDS-T1-GE3 pdf lookup

 SI2323DDS-T1-GE3 substitution

 SI2323DDS-T1-GE3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.