SI2338DS-T1-GE3 PDF and Equivalents Search

 

SI2338DS-T1-GE3 Specs and Replacement

Type Designator: SI2338DS-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

SI2338DS-T1-GE3 substitution

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SI2338DS-T1-GE3 datasheet

 0.1. Size:848K  cn vbsemi
si2338ds-t1-ge3.pdf pdf_icon

SI2338DS-T1-GE3

Si2338DS-T1-GE3 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT... See More ⇒

 6.1. Size:240K  vishay
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SI2338DS-T1-GE3

New Product Si2338DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.028 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.033 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SOT-23 APP... See More ⇒

 9.1. Size:226K  vishay
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SI2338DS-T1-GE3

Si2333DDS Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization 0.028 at VGS = - 4.5 V - 6e For definitions of compliance please see 0.032 at VGS = - 3.7 V - 6e www.vishay.com/doc?99912 - 12 0.040 at VGS = - 2.5 V - 6e 9 nC 0.063 at... See More ⇒

 9.2. Size:186K  vishay
si2333ds.pdf pdf_icon

SI2338DS-T1-GE3

Si2333DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.032 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.042 at VGS = - 2.5 V - 12 - 4.6 APPLICATIONS 0.059 at VGS = - 1.8 V - 3.9 Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View S... See More ⇒

Detailed specifications: VB2103K, SI2318CDS-T1-GE3, SI2318DS-T1-GE3, SI2319CDS-T1-GE3, SI2319DS-T1-GE3, SI2323CDS-T1-GE3, SI2323DDS-T1-GE3, SI2323DS-T1, AON6414A, CS4N80FA9HD, VB2290, CS4N80A4HD-G, VB8338, CS4N80A3HD-G, CS4N70FA9R, VBA1615, VBA1630

Keywords - SI2338DS-T1-GE3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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