CS25N06B4 Datasheet. Specs and Replacement

Type Designator: CS25N06B4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO252

  📄📄 Copy 

CS25N06B4 substitution

- MOSFET ⓘ Cross-Reference Search

 

CS25N06B4 datasheet

 ..1. Size:697K  wuxi china
 cs25n06b4.pdf pdf_icon

CS25N06B4

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s... See More ⇒

 7.1. Size:708K  crhj
 cs25n06 b3.pdf pdf_icon

CS25N06B4

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 7.2. Size:696K  crhj
 cs25n06 b8.pdf pdf_icon

CS25N06B4

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 7.3. Size:697K  crhj
 cs25n06 b4.pdf pdf_icon

CS25N06B4

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s... See More ⇒

SHOW MORE

Detailed specifications: VB8338, CS4N80A3HD-G, CS4N70FA9R, VBA1615, VBA1630, CS24N40FA9H, CS24N50ANHD, CS25N06B3, IRF9540N, CS25N06B8, CS4N65FA9HD, CS4N65A3HD1-G, SI2369DS-T1, SI2399CDS-T1, CS460FA9H, SI3407DV-T1, SI3456DDV-T1

Keywords - CS25N06B4 MOSFET specs

 CS25N06B4 cross reference

 CS25N06B4 equivalent finder

 CS25N06B4 pdf lookup

 CS25N06B4 substitution

 CS25N06B4 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.