CS25N06B4 Spec and Replacement
Type Designator: CS25N06B4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO252
CS25N06B4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS25N06B4 Specs
cs25n06b4.pdf
Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s... See More ⇒
cs25n06 b3.pdf
Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
cs25n06 b8.pdf
Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
cs25n06 b4.pdf
Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s... See More ⇒
Detailed specifications: VB8338 , CS4N80A3HD-G , CS4N70FA9R , VBA1615 , VBA1630 , CS24N40FA9H , CS24N50ANHD , CS25N06B3 , 2N7002 , CS25N06B8 , CS4N65FA9HD , CS4N65A3HD1-G , SI2369DS-T1 , SI2399CDS-T1 , CS460FA9H , SI3407DV-T1 , SI3456DDV-T1 .
Keywords - CS25N06B4 MOSFET specs
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