All MOSFET. CS4N65A3HD1-G Datasheet

 

CS4N65A3HD1-G Datasheet and Replacement


   Type Designator: CS4N65A3HD1-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO251
 

 CS4N65A3HD1-G substitution

   - MOSFET ⓘ Cross-Reference Search

 

CS4N65A3HD1-G Datasheet (PDF)

 ..1. Size:324K  wuxi china
 cs4n65a3hd1-g.pdf pdf_icon

CS4N65A3HD1-G

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto

 4.1. Size:231K  wuxi china
 cs4n65a3hd.pdf pdf_icon

CS4N65A3HD1-G

Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 4.2. Size:353K  wuxi china
 cs4n65a3hdy.pdf pdf_icon

CS4N65A3HD1-G

Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 6.1. Size:220K  wuxi china
 cs4n65a3r.pdf pdf_icon

CS4N65A3HD1-G

Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

SHOW MORE

Datasheet: VBA1615 , VBA1630 , CS24N40FA9H , CS24N50ANHD , CS25N06B3 , CS25N06B4 , CS25N06B8 , CS4N65FA9HD , IRLB4132 , SI2369DS-T1 , SI2399CDS-T1 , CS460FA9H , SI3407DV-T1 , SI3456DDV-T1 , SI3460DV-T1 , SI3477DV-T1-GE3 , SI3585DV-T1 .

History: 4N60KG-TMS4-T

Keywords - CS4N65A3HD1-G MOSFET datasheet

 CS4N65A3HD1-G cross reference
 CS4N65A3HD1-G equivalent finder
 CS4N65A3HD1-G lookup
 CS4N65A3HD1-G substitution
 CS4N65A3HD1-G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.