All MOSFET. IRF630A Datasheet

 

IRF630A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF630A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 72 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO220

IRF630A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF630A Datasheet (PDF)

1.1. irf630a.pdf Size:945K _samsung

IRF630A
IRF630A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

1.2. irf630a.pdf Size:245K _inchange_semiconductor

IRF630A
IRF630A

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed espec

 4.1. irf630pbf.pdf Size:203K _upd-mosfet

IRF630A
IRF630A

IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.40 RoHS* • Fast Switching Qg (Max.) (nC) 43 COMPLIANT • Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D D

4.2. irf630spbf.pdf Size:196K _upd-mosfet

IRF630A
IRF630A

IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ()VGS = 10 V 0.40 • Surface Mount Qg (Max.) (nC) 43 • Available in Tape and Reel Qgs (nC) 7.0 • Dynamic dV/dt Rating Qgd (nC) 23 • Repetitive Avalanche Rated Configuration Single • Fast Switching • Ease of Paralleli

 4.3. irf630h.pdf Size:594K _upd-mosfet

IRF630A
IRF630A

RoHS IRF630 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (9A, 200Volts) DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors. D They are designed, tested and guaranteed to withstand D level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

4.4. irf630nlpbf irf630npbf irf630nspbf.pdf Size:335K _upd-mosfet

IRF630A
IRF630A

PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET® Power MOSFET l 175°C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30Ω G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET® Power MOSFETs from S International Rec

 4.5. irf630mfp.pdf Size:434K _update

IRF630A
IRF630A

www.DataSheet4U.com IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V < 0.40 Ω 9 A IRF630FPM 200 V < 0.40 Ω 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 TO-220 TO-220FP DESCRIPTION This power MOSFET is designed using

4.6. irf630nstrrpbf.pdf Size:335K _update-mosfet

IRF630A
IRF630A

PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET® Power MOSFET l 175°C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30Ω G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET® Power MOSFETs from S International Rec

4.7. irf630 s 1.pdf Size:99K _philips

IRF630A
IRF630A

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 9 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology

4.8. irf630s.pdf Size:85K _st

IRF630A
IRF630A

IRF630S  N - CHANNEL 200V - 0.35Ω - 9A- D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630S 200 V < 0.40 Ω 9 A TYPICAL R = 0.35 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT 3 SALES OFFICE 1 DESCRIPTION D2PAK This power MOSFET is designed using the TO-

4.9. irf630 irf630fp.pdf Size:339K _st

IRF630A
IRF630A

IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET General features Type VDSS RDS(on) ID IRF630 200V <0.40Ω 9A IRF630FP 200V <0.40Ω 9A ■ Extremely high dv/dt capability 3 3 2 2 ■ Very low intrinsic capacitances 1 1 TO-220 TO-220FP ■ Gate charge minimized Description This power MOSFET is designed using the company’s consolid

4.10. irf630mfp.pdf Size:434K _st

IRF630A
IRF630A

www.DataSheet4U.com IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V < 0.40 Ω 9 A IRF630FPM 200 V < 0.40 Ω 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 TO-220 TO-220FP DESCRIPTION This power MOSFET is designed using

4.11. irf630m.pdf Size:343K _st

IRF630A
IRF630A

IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V < 0.40 Ω 9 A IRF630FPM 200 V < 0.40 Ω 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 TO-220 TO-220FP DESCRIPTION This power MOSFET is designed using the compa- ny’s co

4.12. irf630.pdf Size:104K _st

IRF630A
IRF630A

IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630 200 V < 0.40 Ω 9 A IRF630FP 200 V < 0.40 Ω 9 A TYPICAL R = 0.35 Ω DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip l

4.13. irf630-6333 irf230-233 mtp12n18-20.pdf Size:177K _fairchild_semi

IRF630A
IRF630A



4.14. irf630 rf1s630sm.pdf Size:129K _fairchild_semi

IRF630A
IRF630A

IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs • 9A, 200V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.400Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc

4.15. irf630b.pdf Size:859K _fairchild_semi

IRF630A
IRF630A

IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 22 pF) This advanced technology has been especially tailored to • Fast switchin

4.16. irf630.pdf Size:177K _fairchild_semi

IRF630A
IRF630A



4.17. irf630pbf.pdf Size:1372K _international_rectifier

IRF630A
IRF630A

PD- 95916 IRF630PbF • Lead-Free 9/27/04 Document Number: 91031 www.vishay.com 1 IRF630PbF Document Number: 91031 www.vishay.com 2 IRF630PbF Document Number: 91031 www.vishay.com 3 IRF630PbF Document Number: 91031 www.vishay.com 4 IRF630PbF Document Number: 91031 www.vishay.com 5 IRF630PbF Document Number: 91031 www.vishay.com 6 IRF630PbF Peak Diode Recovery dv/dt T

4.18. irf630n.pdf Size:155K _international_rectifier

IRF630A
IRF630A

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology HEXFET® Power MOSFET Dynamic dv/dt Rating 175°C Operating Temperature D VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.30Ω Ease of Paralleling G Simple Drive Requirements Description ID = 9.3A Fifth Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced proces

4.19. irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf Size:335K _international_rectifier

IRF630A
IRF630A

PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET® Power MOSFET l 175°C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30Ω G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET® Power MOSFETs from S International Rec

4.20. irf630spbf.pdf Size:981K _international_rectifier

IRF630A
IRF630A

PD - 95118 IRF630SPbF • Lead-Free 3/17/04 Document Number: 91032 www.vishay.com 1 IRF630SPbF Document Number: 91032 www.vishay.com 2 IRF630SPbF Document Number: 91032 www.vishay.com 3 IRF630SPbF Document Number: 91032 www.vishay.com 4 IRF630SPbF Document Number: 91032 www.vishay.com 5 IRF630SPbF Document Number: 91032 www.vishay.com 6 IRF630SPbF D2Pak Package Outli

4.21. irf630.pdf Size:176K _international_rectifier

IRF630A
IRF630A



4.22. irfp230-233 irf630-633.pdf Size:186K _samsung

IRF630A
IRF630A



4.23. irf630s sihf630s.pdf Size:170K _vishay

IRF630A
IRF630A

IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) (?)VGS = 10 V 0.40 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling Simple Drive

4.24. irf630 sihf630.pdf Size:575K _vishay

IRF630A
IRF630A

IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 Fast Switching RoHS* Qg (Max.) (nC) 43 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION TO-220 Third gener

4.25. irf630b.pdf Size:67K _no

IRF630A
IRF630A



4.26. irf630n.pdf Size:245K _inchange_semiconductor

IRF630A
IRF630A

isc N-Channel MOSFET Transistor IRF630N,IIRF630N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T

4.27. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

IRF630A
IRF630A

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630NSTRRPBF DESCRIPTION ·Drain Current –I =9.3A@ T =25℃ D C ·Drain Source Voltage- : V = 200V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.3Ω(Max) DS(on) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This de

4.28. irf630b.pdf Size:142K _inchange_semiconductor

IRF630A
IRF630A

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed APPLICATIONS ·Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conve

4.29. irf630f.pdf Size:108K _inchange_semiconductor

IRF630A

MOSFET INCHANGE IRF630F N-channel mosfet transistor Features ·With TO-220F package 1 2 3 ·Low on-stateand thermal resistance ·Fast switching ·VDSS=200V; RDS(ON)≤0.4Ω;ID=9A ·1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage ±20 V ID Drain Current-continuous@ TC

4.30. irf630.pdf Size:114K _inchange_semiconductor

IRF630A

MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 ·With TO-220 package ·Low on-state and thermal resistance ·Fast switching ·VDSS=200V; RDS(ON)≤0.4Ω;ID=9A ·1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage ±20 V ID Drain Current-continuous@ TC

4.31. hirf630.pdf Size:75K _hsmc

IRF630A
IRF630A

Spec. No. : MOS200401 HI-SINCERITY Issued Date : 2004.04.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/6 HIRF630 Series Pin Assignment HIRF630 / HIRF630F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This power MOSFET is designed for low voltage, high speed power switching applicati

4.32. irf630.pdf Size:94K _ape

IRF630A
IRF630A

IRF630 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Ease of Paralleling D BVDSS 200V ▼ Fast Switching Characteristic RDS(ON) 0.4Ω ▼ Simple Drive Requirement ID 9.0A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.

4.33. irf630h.pdf Size:594K _nell

IRF630A
IRF630A

RoHS IRF630 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (9A, 200Volts) DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors. D They are designed, tested and guaranteed to withstand D level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

4.34. irf630s.pdf Size:1779K _kexin

IRF630A
IRF630A

SMD Type MOSFET N-Channel MOSFET IRF630S (KRF630S) ■ Features ● VDS (V) = 200V ● ID = 9 A (VGS = 10V) ● RDS(ON) < 400mΩ (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS ±20 Ta = 25℃ 9 Cont

Datasheet: IRF6215S , IRF622 , IRF623 , IRF624 , IRF624A , IRF624S , IRF625 , IRF630 , IRFZ24N , IRF630FI , IRF630S , IRF631 , IRF632 , IRF633 , IRF634 , IRF634A , IRF634S .

 

 
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