ISL9N306AS3S MOSFET Datasheet: N-Ch, 30V, 98A. Full specification with pinout and replacement list

ISL9N306AS3S Specs and Replacement

Type Designator: ISL9N306AS3S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 98 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO262 TO263

ISL9N306AS3S substitution

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ISL9N306AS3S datasheet

..1. Size:861K cn vbsemi
isl9n306as3s.pdf pdf_icon

ISL9N306AS3S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0038 at VGS = 10 V 98 30 82 nC 0.0044 at VGS = 4.5 V 98 APPLICATIONS OR-ing Server DC/DC D I2PAK D2PAK (TO-262) (TO-263) G G D S S V... See More ⇒

5.1. Size:843K cn vbsemi
isl9n306ad3s.pdf pdf_icon

ISL9N306AD3S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET AB... See More ⇒

7.1. Size:249K fairchild semi
isl9n302as3st.pdf pdf_icon

April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) =0.0019 (Typ), VGS =10V low on-resistance. rDS(ON) =0.0027 (Typ), VGS =4.5V Optimized for switching applications, this... See More ⇒

7.2. Size:269K fairchild semi
isl9n303ap3.pdf pdf_icon

September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) = 0.0026 (Typ), VGS = 10V low on-resistance. rDS(ON) = 0.004 (Typ), VGS =... See More ⇒