All MOSFET. ISL9N306AS3S Datasheet

 

ISL9N306AS3S MOSFET. Datasheet pdf. Equivalent


   Type Designator: ISL9N306AS3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 98 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 171 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1725 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO262 TO263

 ISL9N306AS3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ISL9N306AS3S Datasheet (PDF)

 ..1. Size:861K  cn vbsemi
 isl9n306as3s.pdf

ISL9N306AS3S ISL9N306AS3S

ISL9N306AS3Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0038 at VGS = 10 V 9830 82 nC0.0044 at VGS = 4.5 V 98APPLICATIONS OR-ing Server DC/DCDI2PAK D2PAK(TO-262) (TO-263)GGDSSV

 5.1. Size:843K  cn vbsemi
 isl9n306ad3s.pdf

ISL9N306AS3S ISL9N306AS3S

ISL9N306AD3Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETAB

 7.1. Size:249K  fairchild semi
 isl9n302as3st.pdf

ISL9N306AS3S ISL9N306AS3S

April 2002ISL9N302AS3STN-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) =0.0019 (Typ), VGS =10Vlow on-resistance. rDS(ON) =0.0027 (Typ), VGS =4.5VOptimized for switching applications, this

 7.2. Size:269K  fairchild semi
 isl9n303ap3.pdf

ISL9N306AS3S ISL9N306AS3S

September 2002PWM OptimizedISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3N-Channel Logic Level UltraFET Trench MOSFETs30V, 75A, 3.2mGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0026 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.004 (Typ), VGS =

 7.3. Size:121K  fairchild semi
 isl9n302ap3.pdf

ISL9N306AS3S ISL9N306AS3S

January 2002ISL9N302AP3N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0019 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.0027 (Typ), VGS = 4.5VOptimized for switching applications,

 7.4. Size:1031K  cn vbsemi
 isl9n308ad3.pdf

ISL9N306AS3S ISL9N306AS3S

ISL9N308AD3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS

 7.5. Size:1030K  cn vbsemi
 isl9n308ad3st.pdf

ISL9N306AS3S ISL9N306AS3S

ISL9N308AD3STwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETA

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