All MOSFET. VB5222 Datasheet

 

VB5222 Datasheet and Replacement


   Type Designator: VB5222
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSOP6
 

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VB5222 Datasheet (PDF)

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VB5222

VB5222www.VBsemi.comN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at VG

Datasheet: CS3N40A3H , CS3N40A4H , CS3N50B3 , ISL9N306AS3S , CS3N50B4 , VB2703K , VB3222 , VB4290 , SKD502T , CS3N90A3H1-G , RTR025N05T , RYU002N05T306 , CS3N80ARH , NTD20N06T4 , NTD24N06LT4G , NTD25P03LG , NDS9945-NL .

History: ME20N03-G | 2N6798U | 2N7335E3 | STP130N6F7 | PSA10N65C | SUD08P06-155 | IRL7486MTRPBF

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