VB5222 Specs and Replacement
Type Designator: VB5222
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TSOP6
VB5222 substitution
- MOSFET ⓘ Cross-Reference Search
VB5222 datasheet
vb5222.pdf
VB5222 www.VBsemi.com N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at VG... See More ⇒
Detailed specifications: CS3N40A3H, CS3N40A4H, CS3N50B3, ISL9N306AS3S, CS3N50B4, VB2703K, VB3222, VB4290, RFP50N06, CS3N90A3H1-G, RTR025N05T, RYU002N05T306, CS3N80ARH, NTD20N06T4, NTD24N06LT4G, NTD25P03LG, NDS9945-NL
Keywords - VB5222 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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