All MOSFET. IRF631 Datasheet

 

IRF631 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF631

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO220

IRF631 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF631 Datasheet (PDF)

9.1. irf630b irfs630b.pdf Size:859K _1

IRF631
IRF631

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin

9.2. irf630 s 1.pdf Size:99K _philips

IRF631
IRF631

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technology

 9.3. irf630s.pdf Size:85K _st

IRF631
IRF631

IRF630S N - CHANNEL 200V - 0.35 - 9A- D2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630S 200 V

9.4. irf630 irf630fp.pdf Size:339K _st

IRF631
IRF631

IRF630IRF630FPN-channel 200V - 0.35 - 9A TO-220/TO-220FPMesh overlay II Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF630 200V

 9.5. irf630mfp.pdf Size:434K _st

IRF631
IRF631

www.DataSheet4U.comIRF630MIRF630MFPN-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630M 200 V

9.6. irf630m.pdf Size:343K _st

IRF631
IRF631

IRF630MIRF630MFPN-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630M 200 V

9.7. irf630.pdf Size:104K _st

IRF631
IRF631

IRF630IRF630FP N - CHANNEL 200V - 0.35 - 9A - TO-220/FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630 200 V

9.8. irf634b irfs634b.pdf Size:859K _fairchild_semi

IRF631
IRF631

November 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

9.9. irf630-6333 irf230-233 mtp12n18-20.pdf Size:177K _fairchild_semi

IRF631
IRF631

9.10. irf630 rf1s630sm.pdf Size:129K _fairchild_semi

IRF631
IRF631

IRF630, RF1S630SMData Sheet January 20029A, 200V, 0.400 Ohm, N-Channel Power FeaturesMOSFETs 9A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.400power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc

9.11. irf630b.pdf Size:859K _fairchild_semi

IRF631
IRF631

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin

9.12. irf630.pdf Size:177K _fairchild_semi

IRF631
IRF631

9.13. irf634b.pdf Size:643K _fairchild_semi

IRF631
IRF631

December 2013IRF634BN-Channel BFET MOSFET250 V, 8.1 A, 450 mDescription FeaturesThese N-Channel enhancement mode power field effect 8.1 A, 250 V, RDS(on) = 450 m @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 29 nC)planar, DMOS technology. This advanced technology has Low Crss (Typ. 20 pF)been especially tailored to

9.14. irf630pbf.pdf Size:1372K _international_rectifier

IRF631
IRF631

PD- 95916IRF630PbF Lead-Free9/27/04Document Number: 91031 www.vishay.com1IRF630PbFDocument Number: 91031 www.vishay.com2IRF630PbFDocument Number: 91031 www.vishay.com3IRF630PbFDocument Number: 91031 www.vishay.com4IRF630PbFDocument Number: 91031 www.vishay.com5IRF630PbFDocument Number: 91031 www.vishay.com6IRF630PbFPeak Diode Recovery dv/dt T

9.15. irf634n-s-lpbf.pdf Size:244K _international_rectifier

IRF631
IRF631

PD - 95342IRF634NPbFIRF634NSPbFl Advanced Process TechnologyIRF634NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDl Fully Avalanche Rated VDSS = 250Vl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.435Gl Lead-FreeDescriptionID = 8.0AFifth Generation HEXFET Power MOSFETs from InternationalSRect

9.16. irf630n.pdf Size:155K _international_rectifier

IRF631
IRF631

PD - 94005AIRF630NIRF630NSIRF630NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature DVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.30 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced proces

9.17. irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf Size:335K _international_rectifier

IRF631
IRF631

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

9.18. irf630spbf.pdf Size:981K _international_rectifier

IRF631
IRF631

PD - 95118IRF630SPbF Lead-Free3/17/04Document Number: 91032 www.vishay.com1IRF630SPbFDocument Number: 91032 www.vishay.com2IRF630SPbFDocument Number: 91032 www.vishay.com3IRF630SPbFDocument Number: 91032 www.vishay.com4IRF630SPbFDocument Number: 91032 www.vishay.com5IRF630SPbFDocument Number: 91032 www.vishay.com6IRF630SPbFD2Pak Package Outli

9.19. irf634n.pdf Size:301K _international_rectifier

IRF631
IRF631

PD - 94310IRF634NIRF634NSIRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175C Operating TemperatureD Fast SwitchingVDSS = 250V Fully Avalanche Rated Ease of ParallelingRDS(on) = 0.435 Simple Drive RequirementsGDescriptionFifth Generation HEXFET Power MOSFETs from InternationalID = 8.0ARectifier utilize advanced processin

9.20. irf634s.pdf Size:324K _international_rectifier

IRF631
IRF631

PD - 95541IRF634SPbF Lead-FreeSMD-2207/21/04Document Number: 91035 www.vishay.com1IRF634SPbFDocument Number: 91035 www.vishay.com2IRF634SPbFDocument Number: 91035 www.vishay.com3IRF634SPbFDocument Number: 91035 www.vishay.com4IRF634SPbFDocument Number: 91035 www.vishay.com5IRF634SPbFDocument Number: 91035 www.vishay.com6IRF634SPbFPeak Diode

9.21. irf634.pdf Size:171K _international_rectifier

IRF631
IRF631

9.22. irf634pbf.pdf Size:2141K _international_rectifier

IRF631
IRF631

PD - 94975IRF634PbF Lead-Free02/03/04Document Number: 91034 www.vishay.com1IRF634PbFDocument Number: 91034 www.vishay.com2IRF634PbFDocument Number: 91034 www.vishay.com3IRF634PbFDocument Number: 91034 www.vishay.com4IRF634PbFDocument Number: 91034 www.vishay.com5IRF634PbFDocument Number: 91034 www.vishay.com6IRF634PbFTO-220AB Package Outline

9.23. irf630.pdf Size:176K _international_rectifier

IRF631
IRF631

9.24. irf630a.pdf Size:945K _samsung

IRF631
IRF631

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.25. irfp230-233 irf630-633.pdf Size:186K _samsung

IRF631
IRF631

9.26. irf634a.pdf Size:790K _samsung

IRF631
IRF631

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.27. irf636a.pdf Size:527K _samsung

IRF631
IRF631

Advanced Power MOSFETFEATURESBVDSS = 275 V Avalanche Rugged TechnologyRDS(on) = 0.50 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.1 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 275V Lower RDS(ON) : 0.380 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

9.28. irf636.pdf Size:557K _samsung

IRF631
IRF631

Advanced Power MOSFETFEATURESBVDSS = 275 V Avalanche Rugged TechnologyRDS(on) = 0.50 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.1 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 275V Lower RDS(ON) : 0.380 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

9.29. irf634nlpbf irf634nspbf.pdf Size:125K _vishay

IRF631
IRF631

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NSVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Available Dynamic dV/dt Rating RoHS*RDS(on) ()VGS = 10 V 0.435 175 C Operating Temperature COMPLIANTQg (Max.) (nC) 34 Fast SwitchingQgs (nC) 6.5 Fully Avalanche Rated Ease of ParallelingQgd (nC

9.30. irf630s sihf630s.pdf Size:170K _vishay

IRF631
IRF631

IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli

9.31. irf634s sihf634s.pdf Size:168K _vishay

IRF631
IRF631

IRF634S, SiHF634SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt RatingQgs (nC) 6.5 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

9.32. irf634n irf634nl irf634ns sihf634n sihf634nl sihf634ns.pdf Size:158K _vishay

IRF631
IRF631

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NSVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt Rating AvailableRDS(on) ()VGS = 10 V 0.435 175 C Operating TemperatureRoHS* Fast Switching COMPLIANTQg (Max.) (nC) 34 Fully Avalanche RatedQgs (nC) 6.5 Ease of ParallelingQgd (nC

9.33. irf630pbf sihf630.pdf Size:203K _vishay

IRF631
IRF631

IRF630, SiHF630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40RoHS* Fast SwitchingQg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

9.34. irf630spbf sihf630s.pdf Size:196K _vishay

IRF631
IRF631

IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli

9.35. irf630 sihf630.pdf Size:575K _vishay

IRF631
IRF631

IRF630, SiHF630Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Fast Switching RoHS*Qg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTIONTO-

9.36. irf634spbf sihf634s.pdf Size:193K _vishay

IRF631
IRF631

IRF634S, SiHF634SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt RatingQgs (nC) 6.5 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

9.37. irf634pbf sihf634.pdf Size:153K _vishay

IRF631
IRF631

IRF634, SiHF634Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.45RoHS* Fast SwitchingQg (Max.) (nC) 41COMPLIANT Ease of ParallelingQgs (nC) 6.5Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

9.38. irf634 sihf634.pdf Size:201K _vishay

IRF631
IRF631

IRF634, SiHF634Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.45RoHS* Fast SwitchingQg (Max.) (nC) 41COMPLIANT Ease of ParallelingQgs (nC) 6.5Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

9.39. irf630npbf irf630nspbf irf630nlpbf.pdf Size:335K _infineon

IRF631
IRF631

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

9.40. irf630b.pdf Size:67K _no

IRF631
IRF631

9.41. irf634-35-36-37.pdf Size:199K _no

IRF631
IRF631

9.42. hirf630.pdf Size:75K _hsmc

IRF631
IRF631

Spec. No. : MOS200401HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/6HIRF630 Series Pin AssignmentHIRF630 / HIRF630FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis power MOSFET is designed for low voltage, high speed powerswitching applicati

9.43. irf630.pdf Size:94K _ape

IRF631
IRF631

IRF630RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 200V Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 9.0AGSDescriptionGTO-220(P)DAPEC MOSFET provide the power designer with the best combination of fastSswitching , lower on-resistance and reasonable cost.

9.44. irf630h.pdf Size:594K _nell

IRF631
IRF631

RoHS IRF630 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(9A, 200Volts)DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.D They are designed, tested and guaranteed to withstand Dlevel of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

9.45. irf630s.pdf Size:1779K _kexin

IRF631
IRF631

SMD Type MOSFETN-Channel MOSFETIRF630S (KRF630S) Features VDS (V) = 200V ID = 9 A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Cont

9.46. irf630a.pdf Size:245K _inchange_semiconductor

IRF631
IRF631

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed espec

9.47. irf630n.pdf Size:245K _inchange_semiconductor

IRF631
IRF631

isc N-Channel MOSFET Transistor IRF630NIIRF630NFEATURESStatic drain-source on-resistance:RDS(on) 0.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

9.48. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

IRF631
IRF631

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de

9.49. irf630nl.pdf Size:244K _inchange_semiconductor

IRF631
IRF631

Isc N-Channel MOSFET Transistor IRF630NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

9.50. irf630ns.pdf Size:229K _inchange_semiconductor

IRF631
IRF631

Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

9.51. irf630b.pdf Size:142K _inchange_semiconductor

IRF631
IRF631

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION Drain Current ID= 9A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed APPLICATIONS Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conve

9.52. irf634.pdf Size:114K _inchange_semiconductor

IRF631

MOSFET INCHANGE IRF634 N-channel mosfet transistor Features 1 2 3 With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON)0.45;ID=8.1A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 250 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25

9.53. irf630f.pdf Size:108K _inchange_semiconductor

IRF631

MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package 1 2 3 Low on-stateand thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 VID Drain Current-continuous@ TC

9.54. irf630.pdf Size:114K _inchange_semiconductor

IRF631

MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC

Datasheet: IRF624 , IRF624A , IRF624S , IRF625 , IRF630 , IRF630A , IRF630FI , IRF630S , IRF1010E , IRF632 , IRF633 , IRF634 , IRF634A , IRF634S , IRF635 , IRF636A , IRF640 .

 

 
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