NCE6602 Datasheet and Replacement
Type Designator: NCE6602
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TSOP6
NCE6602 substitution
NCE6602 Datasheet (PDF)
nce6602.pdf

Pb Free Producthttp://www.ncepower.com NCE6602NCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel N-Channel Schematic diagram VDS = 30V,I
nce6602.pdf

NCE6602www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at VG
nce6602n.pdf

http://www.ncepower.com NCE6602NNCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel N-Channel Schematic diagram VDS = 30V,ID = 3.5A RDS(ON
Datasheet: CS3N90A3H1-G , RTR025N05T , RYU002N05T306 , CS3N80ARH , NTD20N06T4 , NTD24N06LT4G , NTD25P03LG , NDS9945-NL , IRF830 , NDF02N60ZG , CS3R50A4 , NTR4503NT1G , CS40N20A8 , CS40N20ANH , CS40N20FA9E , CS40N20FA9H , CS2N65FA9 .
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History: APM2324A | DH019N04I



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