All MOSFET. CS3N90F_A9H Datasheet

 

CS3N90F_A9H MOSFET. Datasheet pdf. Equivalent

Type Designator: CS3N90F_A9H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 5.5 Ohm

Package: TO220F

CS3N90F_A9H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS3N90F_A9H PDF doc:

1.1. cs3n90f_a9h.pdf Size:624K _crhj

CS3N90F_A9H
CS3N90F_A9H

Silicon N-Channel Power MOSFET R ○ CS3N90F A9H General Description: VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25℃) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

4.1. cs3n90_a4h.pdf Size:418K _crhj

CS3N90F_A9H
CS3N90F_A9H

Silicon N-Channel Power MOSFET R ○ CS3N90 A4H General Description: VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

4.2. cs3n90_a8.pdf Size:496K _crhj

CS3N90F_A9H
CS3N90F_A9H

Silicon N-Channel Power MOSFET R ○ CS3N90 A8 General Description: VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25℃) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

4.3. cs3n90_a3h.pdf Size:633K _crhj

CS3N90F_A9H
CS3N90F_A9H

Silicon N-Channel Power MOSFET R ○ CS3N90 A3H General Description: VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

Datasheet: CS3N80_A3 , CS3N80_A4 , CS3N80_A8 , CS3N80_ARH , CS3N80F_A9 , CS3N90_A3H , CS3N90_A4H , CS3N90_A8 , SPA11N60C3 , CS3R50_A3 , CS3R50_A4 , CS3R50F_A9 , CS40N20_A8 , CS40N20_ANH , CS40N20F_A9E , CS40N20F_A9H , CS4N60_A3HD .

 


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