CS40N20FA9E Datasheet and Replacement. Cross Reference Search

CS40N20FA9E Datasheet (PDF)

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Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

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Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

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nvertCS40N20F,CS40N20PSuzhou Convert Semiconductor Co ., Ltd.200V N-Channel MOSFETFEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body DiodeAPPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controlsDevice Marking and Package InformationDevice Package

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