All MOSFET. CS4N70A3D Datasheet

 

CS4N70A3D MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS4N70A3D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO251

 CS4N70A3D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS4N70A3D Datasheet (PDF)

 7.1. Size:930K  wuxi china
 cs4n70arhd.pdf

CS4N70A3D CS4N70A3D

Silicon N-Channel Power MOSFET R CS4N70 ARHD General Description VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.1. Size:2205K  jilin sino
 jcs4n70v jcs4n70r jcs4n70mf jcs4n70s jcs4n70b jcs4n70c jcs4n70f.pdf

CS4N70A3D CS4N70A3D

N RN-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA

 8.2. Size:2742K  jilin sino
 jcs4n70v jcs4n70r jcs4n70mf jcs4n70c jcs4n70f jcs4n70b jcs4n70s.pdf

CS4N70A3D CS4N70A3D

N RN-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 8.3. Size:428K  crhj
 cs4n70 a4hd.pdf

CS4N70A3D CS4N70A3D

Silicon N-Channel Power MOSFET R CS4N70 A4HD General Description VDSS 700 V CS4N70 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.4. Size:930K  crhj
 cs4n70 arhd.pdf

CS4N70A3D CS4N70A3D

Silicon N-Channel Power MOSFET R CS4N70 ARHD General Description VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.5. Size:427K  crhj
 cs4n70 a3d.pdf

CS4N70A3D CS4N70A3D

Silicon N-Channel Power MOSFET R CS4N70 A3D General Description VDSS 700 V CS4N70 A3D, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.6. Size:432K  crhj
 cs4n70 a3hd-g.pdf

CS4N70A3D CS4N70A3D

Silicon N-Channel Power MOSFET R CS4N70 A3HD-G General Description VDSS 700 V CS4N70 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 8.7. Size:930K  crhj
 cs4n70f a9d.pdf

CS4N70A3D CS4N70A3D

Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.8. Size:930K  wuxi china
 cs4n70fa9d.pdf

CS4N70A3D CS4N70A3D

Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.9. Size:321K  wuxi china
 cs4n70fa9r.pdf

CS4N70A3D CS4N70A3D

Silicon N-Channel Power MOSFET R CS4N70F A9R General Description VDSS 700 V CS4N70F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.55 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.10. Size:445K  convert
 cs4n70f cs4n70p cs4n70u cs4n70d.pdf

CS4N70A3D CS4N70A3D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N70F,CS4N70P,CS4N70U,CS4N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N70F TO-220F

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDB4030L | IXFK44N50

 

 
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