CS50N20ANH MOSFET. Datasheet pdf. Equivalent
Type Designator: CS50N20ANH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 58 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: TO3PN
CS50N20ANH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS50N20ANH Datasheet (PDF)
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R JCS50N20T JCS50N20T Package MAIN CHARACTERISTICS ID 50A VDSS 200 V Rdson-max 50m @Vgs=10V Qg-typ 90nC APPLICATIONS High frequency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEATURES
cs50n20 anh.pdf
Silicon N-Channel Power MOSFET R CS50N20 ANH General Description VDSS 200 V CS50N20 ANH, the silicon N-channel Enhanced ID 50 A PD (TC=25) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
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nvertSuzhou Convert Semiconductor Co ., Ltd.CS50N06F,CS50N06P,CS50N06U,CS50N06D60V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS50N06F TO-
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