CS50N20ANH Specs and Replacement
Type Designator: CS50N20ANH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO3PN
CS50N20ANH substitution
- MOSFET ⓘ Cross-Reference Search
CS50N20ANH datasheet
cs50n20 anh.pdf
Silicon N-Channel Power MOSFET R CS50N20 ANH General Description VDSS 200 V CS50N20 ANH, the silicon N-channel Enhanced ID 50 A PD (TC=25 ) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf
N R N-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge ... See More ⇒
brcs50n06bd.pdf
BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rss Low R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications ... See More ⇒
Detailed specifications: NCE603S, CS4N65FA9R, CS4N70A3D, CS4N70A3HD-G, CS4N70A4HD, PSMN035-150, RFD12N06RLES, CS4N80A3HD, IRFZ44, CS540A3, CS540A4, IRLTS2242TR, CS540AR, VB1240, CS5N20A3, CS5N20A4, CS5N20FA9
Keywords - CS50N20ANH MOSFET specs
CS50N20ANH cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AP9915J | AP4528GH | SMK1430DI | HFU1N60 | RU3091M | 2SK1016-01 | RU3089M
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