All MOSFET. CS5N20A4 Datasheet

 

CS5N20A4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS5N20A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO252

 CS5N20A4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS5N20A4 Datasheet (PDF)

 ..1. Size:739K  wuxi china
 cs5n20a4.pdf

CS5N20A4 CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:621K  wuxi china
 cs5n20a3.pdf

CS5N20A4 CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:624K  crhj
 cs5n20 a3.pdf

CS5N20A4 CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:615K  crhj
 cs5n20 a4.pdf

CS5N20A4 CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.3. Size:612K  crhj
 cs5n20f a9.pdf

CS5N20A4 CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20F A9 General Description VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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