All MOSFET. CS5N20A4 Datasheet

 

CS5N20A4 Datasheet and Replacement


   Type Designator: CS5N20A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO252
 

 CS5N20A4 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CS5N20A4 Datasheet (PDF)

 ..1. Size:739K  wuxi china
cs5n20a4.pdf pdf_icon

CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:621K  wuxi china
cs5n20a3.pdf pdf_icon

CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:624K  crhj
cs5n20 a3.pdf pdf_icon

CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:615K  crhj
cs5n20 a4.pdf pdf_icon

CS5N20A4

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: CS4N80A3HD , CS50N20ANH , CS540A3 , CS540A4 , IRLTS2242TR , CS540AR , VB1240 , CS5N20A3 , IRF3710 , CS5N20FA9 , NCE4688 , NCE3400A , NCE3404 , NCE40P05Y , CS16N65FA9H , SI9424DY-T1-E3 , SI9430DY-T1 .

History: IRLR8256PBF | KI5P03DY | WMM10N65EM | RMN3N5R0DN | 2SJ555 | FQT2P25 | IRLR024PBF

Keywords - CS5N20A4 MOSFET datasheet

 CS5N20A4 cross reference
 CS5N20A4 equivalent finder
 CS5N20A4 lookup
 CS5N20A4 substitution
 CS5N20A4 replacement

 

 
Back to Top

 


 
.