All MOSFET. CS5N65_A3 Datasheet

 

CS5N65_A3 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS5N65_A3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15.5 nS

Drain-Source Capacitance (Cd): 71 pF

Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm

Package: TO251

CS5N65_A3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS5N65_A3 Datasheet (PDF)

1.1. cs5n65 a3.pdf Size:837K _crhj

CS5N65_A3
CS5N65_A3

Silicon N-Channel Power MOSFET R ○ CS5N65 A3 General Description: VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25℃) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

2.1. cs5n65 a7h.pdf Size:417K _crhj

CS5N65_A3
CS5N65_A3

Silicon N-Channel Power MOSFET R ○ CS5N65 A7H General Description: VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

2.2. cs5n65 a4.pdf Size:837K _crhj

CS5N65_A3
CS5N65_A3

Silicon N-Channel Power MOSFET R ○ CS5N65 A4 General Description: VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25℃) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 2.3. cs5n65 a8h.pdf Size:424K _crhj

CS5N65_A3
CS5N65_A3

Silicon N-Channel Power MOSFET R ○ CS5N65 A8H General Description: VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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