NCE4688
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE4688
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 6.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21
nC
trⓘ - Rise Time: 150
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SO8
NCE4688
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE4688
Datasheet (PDF)
..1. Size:433K ncepower
nce4688.pdf
Pb Free Producthttp://www.ncepower.com NCE4688N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =
..2. Size:1688K cn vbsemi
nce4688.pdf
NCE4688www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL In
9.1. Size:1021K ncepower
nce4614b.pdf
http://www.ncepower.comNCE4614BN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614B uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I
9.2. Size:531K ncepower
nce4614.pdf
Pb Free Producthttp://www.ncepower.com NCE4614N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4
9.3. Size:397K ncepower
nce4606b.pdf
http://www.ncepower.com NCE4606BN and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channelGeneral Features N-Channel Schematic diagram VDS
9.4. Size:575K ncepower
nce4612sp.pdf
http://www.ncepower.comNCE4612SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescription General FeaturesThe NCE4612SP uses advanced trench technology to provide V =24V,I =6ASSS Sexcellent R , low gate charge and operation with gateSS(ON) 2.5V drivevoltages as low as 2.5V while retaining a 12V V rating. ItGS(MAX) Common-drain typeis ES
9.5. Size:423K ncepower
nce4606a.pdf
http://www.ncepower.com NCE4606AN and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Sc
9.6. Size:1122K ncepower
nce4606c.pdf
http://www.ncepower.comNCE4606CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4606C uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channel P-channelGeneral Features N-Channel Schematic diagramV = 30V,I
9.7. Size:1011K ncepower
nce4614c.pdf
http://www.ncepower.comNCE4614CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614C uses advanced trench technology to provideexcellent R and low gate charge. The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I
9.8. Size:434K ncepower
nce4606.pdf
Pb Free Producthttp://www.ncepower.com NCE4606N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =
9.9. Size:294K ncepower
nce4618sp.pdf
Pb Free Product Halogen Free Compliance http://www.ncepower.com NCE4618SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS
9.10. Size:1506K cn vbsemi
nce4606.pdf
NCE4606www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.