NCE3400A PDF and Equivalents Search

 

NCE3400A Specs and Replacement

Type Designator: NCE3400A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

NCE3400A substitution

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NCE3400A datasheet

 ..1. Size:248K  ncepower
nce3400a.pdf pdf_icon

NCE3400A

Pb Free Product http //www.ncepower.com NCE3400A NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram... See More ⇒

 ..2. Size:848K  cn vbsemi
nce3400a.pdf pdf_icon

NCE3400A

NCE3400A www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G... See More ⇒

 0.1. Size:247K  ncepower
nce3400ay.pdf pdf_icon

NCE3400A

http //www.ncepower.com NCE3400AY NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30... See More ⇒

 7.1. Size:326K  ncepower
nce3400.pdf pdf_icon

NCE3400A

Pb Free Product http //www.ncepower.com NCE3400 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram ... See More ⇒

Detailed specifications: CS540A4, IRLTS2242TR, CS540AR, VB1240, CS5N20A3, CS5N20A4, CS5N20FA9, NCE4688, 10N60, NCE3404, NCE40P05Y, CS16N65FA9H, SI9424DY-T1-E3, SI9430DY-T1, SI9433DY, SI9435BDY-T1-E3, SI9435DY-T1

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