SI9424DY-T1-E3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SI9424DY-T1-E3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 1700 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8

SI9424DY-T1-E3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI9424DY-T1-E3 Datasheet (PDF)

..1. Size:852K cn vbsemi
si9424dy-t1-e3.pdf

SI9424DY-T1-E3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Ty

6.1. Size:75K vishay
si9424dy.pdf