SI9424DY-T1-E3 PDF and Equivalents Search

 

SI9424DY-T1-E3 Specs and Replacement

Type Designator: SI9424DY-T1-E3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1700 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SO8

SI9424DY-T1-E3 substitution

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SI9424DY-T1-E3 datasheet

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SI9424DY-T1-E3

SI9424DY-T1-E3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Ty... See More ⇒

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Detailed specifications: CS5N20A3, CS5N20A4, CS5N20FA9, NCE4688, NCE3400A, NCE3404, NCE40P05Y, CS16N65FA9H, P55NF06, SI9430DY-T1, SI9433DY, SI9435BDY-T1-E3, SI9435DY-T1, CS60N04C4, NDT452AP-NL, CS16N06AE-G, CS12N06AE-G

Keywords - SI9424DY-T1-E3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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