SI9424DY-T1-E3 Datasheet and Replacement
Type Designator: SI9424DY-T1-E3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1700 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SO8
SI9424DY-T1-E3 substitution
SI9424DY-T1-E3 Datasheet (PDF)
si9424dy-t1-e3.pdf
SI9424DY-T1-E3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Ty
Datasheet: CS5N20A3 , CS5N20A4 , CS5N20FA9 , NCE4688 , NCE3400A , NCE3404 , NCE40P05Y , CS16N65FA9H , 2SK3878 , SI9430DY-T1 , SI9433DY , SI9435BDY-T1-E3 , SI9435DY-T1 , CS60N04C4 , NDT452AP-NL , CS16N06AE-G , CS12N06AE-G .
History: KX120N06 | TK3R3A06PL | IRLMS1503PBF-1 | NVB5860N | KU2310Q | 630A | CS16N65FA9H
Keywords - SI9424DY-T1-E3 MOSFET datasheet
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SI9424DY-T1-E3 substitution
SI9424DY-T1-E3 replacement
History: KX120N06 | TK3R3A06PL | IRLMS1503PBF-1 | NVB5860N | KU2310Q | 630A | CS16N65FA9H
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