SI9433DY Specs and Replacement
Type Designator: SI9433DY
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1700 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SO8
SI9433DY substitution
- MOSFET ⓘ Cross-Reference Search
SI9433DY datasheet
si9433dy.pdf
SI9433DY www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical ... See More ⇒
si9433bdy.pdf
SI9433BDY www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical... See More ⇒
Detailed specifications: CS5N20FA9, NCE4688, NCE3400A, NCE3404, NCE40P05Y, CS16N65FA9H, SI9424DY-T1-E3, SI9430DY-T1, 7N65, SI9435BDY-T1-E3, SI9435DY-T1, CS60N04C4, NDT452AP-NL, CS16N06AE-G, CS12N06AE-G, RQK0301FG, RRQ030P03TR
Keywords - SI9433DY MOSFET specs
SI9433DY cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK2549 | FDB3632 | WML15N65F2 | FDD6644
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