All MOSFET. CS60N04_A4 Datasheet

 

CS60N04_A4 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS60N04_A4

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: TO252

CS60N04_A4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS60N04_A4 Datasheet (PDF)

1.1. cs60n04 a4.pdf Size:195K _crhj

CS60N04_A4
CS60N04_A4

Silicon N-Channel Trench MOSFET R ○ CS60N04 A4 General Description: VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25℃) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 mΩ the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi

4.1. cs60n06 c4.pdf Size:688K _crhj

CS60N04_A4
CS60N04_A4

Silicon N-Channel Power MOSFET R ○ CS60N06 C4 General Description: VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 

Datasheet: CS5N65_A4 , CS5N65_A7H , CS5N65_A8H , CS5N65F_A9H , CS5N70_A4 , CS5N70F_A9 , CS5N90_ARH-G , CS5N90F_A9H , IRF150 , CS60N04_C4 , CS630_A3H , CS630_A4H , CS630_A8H , CS630F_A9H , CS640_A0H , CS640_A8H , CS640F_A9H .

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