RRR040P03TL Datasheet and Replacement
Type Designator: RRR040P03TL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
RRR040P03TL substitution
RRR040P03TL Datasheet (PDF)
rrr040p03tl.pdf

RRR040P03TLwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT
rrr040p03.pdf

4V Drive Pch MOSFET RRR040P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT3Features(3)1) Low On-resistance.2) Space saving small surface mount package (TSMT3).(1) (2)3) 4V drive.Abbreviated symbol : UG ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (pieces) 3000
rrr040p03fra.pdf

RRR040P03FRADatasheetPch -30V -4A Small Signal MOSFETlOutlinel SOT-346TVDSS-30V SC-96RDS(on)(Max.)45m TSMT3ID4APD1.0W lInner circuitllFeaturesl1) Low on - resistance2) Built-in G-S Protection Diode3) Small Surface Mount Package (TSMT3)4) Pb-free lead plating ; RoHS compliant5) AEC-Q101 Qualified
Datasheet: SI9435BDY-T1-E3 , SI9435DY-T1 , CS60N04C4 , NDT452AP-NL , CS16N06AE-G , CS12N06AE-G , RQK0301FG , RRQ030P03TR , IRF4905 , RFD16N05LSM9A , CS6N60A3D , CS6N60A3HDY , SI2306DS-T1 , SI2308DS-T1-GE3 , CS6N60A4H , NTMS4177PR , CS6N60A7H .
History: 2SK2148-01R
Keywords - RRR040P03TL MOSFET datasheet
RRR040P03TL cross reference
RRR040P03TL equivalent finder
RRR040P03TL lookup
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RRR040P03TL replacement
History: 2SK2148-01R



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