CS6N60A4H Datasheet and Replacement. Cross Reference Search

CS6N60A4H Datasheet (PDF)

6.1. Size:422K wuxi china
cs6n60a4ty.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

6.2. Size:351K wuxi china
cs6n60a4d.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

7.1. Size:319K wuxi china
cs6n60a3ty.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

7.2. Size:231K wuxi china
cs6n60a3d.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Datasheet: RQK0301FG , RRQ030P03TR , RRR040P03TL , RFD16N05LSM9A , CS6N60A3D , CS6N60A3HDY , SI2306DS-T1 , SI2308DS-T1-GE3 , AON7410 , NTMS4177PR , CS6N60A7H , CS6N60A8H , CS6N60FA9H , CS6N60FA9H-G , UT3N06G-AE3 , CS6N70A3D1-G , SI4559EY .