CS6N60A4H MOSFET Datasheet: N-Ch, 600V, 6A. Full specification with pinout and replacement list

CS6N60A4H Specs and Replacement

Type Designator: CS6N60A4H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: TO252

CS6N60A4H substitution

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CS6N60A4H datasheet

6.1. Size:422K wuxi china
cs6n60a4ty.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

6.2. Size:351K wuxi china
cs6n60a4d.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

7.1. Size:319K wuxi china
cs6n60a3ty.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

7.2. Size:231K wuxi china
cs6n60a3d.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

Detailed specifications: RQK0301FG, RRQ030P03TR, RRR040P03TL, RFD16N05LSM9A, CS6N60A3D, CS6N60A3HDY, SI2306DS-T1, SI2308DS-T1-GE3, SPP20N60C3, NTMS4177PR, CS6N60A7H, CS6N60A8H, CS6N60FA9H, CS6N60FA9H-G, UT3N06G-AE3, CS6N70A3D1-G, SI4559EY