NTMS4177PR PDF and Equivalents Search

 

NTMS4177PR Specs and Replacement

Type Designator: NTMS4177PR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: SO8

NTMS4177PR substitution

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NTMS4177PR datasheet

 ..1. Size:853K  cn vbsemi
 ntms4177pr.pdf pdf_icon

NTMS4177PR

NTMS4177PR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop P... See More ⇒

 0.1. Size:86K  onsemi
 ntms4177p ntms4177pr2g.pdf pdf_icon

NTMS4177PR

NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19... See More ⇒

 5.1. Size:86K  onsemi
 ntms4177p.pdf pdf_icon

NTMS4177PR

NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19... See More ⇒

 7.1. Size:86K  onsemi
 ntms4176p ntms4176pr2g.pdf pdf_icon

NTMS4177PR

NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 18 mW @ -10 V -30 V -9.6 A Applications 30 m... See More ⇒

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Detailed specifications: RRQ030P03TR, RRR040P03TL, RFD16N05LSM9A, CS6N60A3D, CS6N60A3HDY, SI2306DS-T1, SI2308DS-T1-GE3, CS6N60A4H, SKD502T, CS6N60A7H, CS6N60A8H, CS6N60FA9H, CS6N60FA9H-G, UT3N06G-AE3, CS6N70A3D1-G, SI4559EY, CS6N70A3H

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