UT3N06G-AE3 Specs and Replacement
Type Designator: UT3N06G-AE3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.09 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT23
UT3N06G-AE3 substitution
- MOSFET ⓘ Cross-Reference Search
UT3N06G-AE3 datasheet
ut3n06g-ae3.pdf
UT3N06G-AE3 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) ... See More ⇒
ut3n06g-ab3-r ut3n06g-ae3-r ut3n06l-tm3-t ut3n06g-tm3-t ut3n06l-tn3-r ut3n06g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL Drain Gate ... See More ⇒
ut3n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL Drain Gate ... See More ⇒
ut3n01z.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3N01Z Power MOSFET N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device s general purpose is for switching device applications. FEATURES * RDS(ON) ... See More ⇒
Detailed specifications: SI2306DS-T1, SI2308DS-T1-GE3, CS6N60A4H, NTMS4177PR, CS6N60A7H, CS6N60A8H, CS6N60FA9H, CS6N60FA9H-G, 5N65, CS6N70A3D1-G, SI4559EY, CS6N70A3H, SI4922BDY, CS6N70A8D, CS6N70B3D1-G, CS6N70CRHD, SI4946BEY-T1
Keywords - UT3N06G-AE3 MOSFET specs
UT3N06G-AE3 cross reference
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UT3N06G-AE3 substitution
UT3N06G-AE3 replacement
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History: WMK14N70C4 | WMJ28N65F2 | WMK07N80M3 | WMK10N65C4 | WMH7N65D1B | WMK119N12LG4
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