SMC3407S PDF and Equivalents Search

 

SMC3407S Specs and Replacement

Type Designator: SMC3407S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

SMC3407S substitution

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SMC3407S datasheet

 ..1. Size:907K  cn vbsemi
 smc3407s.pdf pdf_icon

SMC3407S

SMC3407S www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23... See More ⇒

 7.1. Size:369K  semtron
 smc3407.pdf pdf_icon

SMC3407S

SMC3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design ... See More ⇒

 8.1. Size:372K  semtron
 smc3401.pdf pdf_icon

SMC3407S

SMC3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ)@VGS =-2.5V provide excelle... See More ⇒

 8.2. Size:361K  semtron
 smc3400.pdf pdf_icon

SMC3407S

SMC3400 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC3400 is the N-Channel logic enhancement 30V/5A, RDS(ON) =25m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4A, RDS(ON) =28m (typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3A, RDS(ON) =37m (typ.)@VGS =2.5V provide excellent RDS(ON).lo... See More ⇒

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Detailed specifications: SI4559EY , CS6N70A3H , SI4922BDY , CS6N70A8D , CS6N70B3D1-G , CS6N70CRHD , SI4946BEY-T1 , CS6N70FA9H , TK10A60D , CS6N80A0H , SI9945AEY-T1-E3 , SI9945BDY-T1 , SI9945DY , CS6N90A8H , NCE2305A , NCE3007S , MTD6P10ET4 .

Keywords - SMC3407S MOSFET specs

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