SI9945BDY-T1 PDF and Equivalents Search

 

SI9945BDY-T1 Specs and Replacement

Type Designator: SI9945BDY-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO8

SI9945BDY-T1 substitution

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SI9945BDY-T1 datasheet

 ..1. Size:947K  cn vbsemi
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SI9945BDY-T1

SI9945BDY-T1 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Cha... See More ⇒

 5.1. Size:268K  vishay
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Detailed specifications: CS6N70A8D, CS6N70B3D1-G, CS6N70CRHD, SI4946BEY-T1, CS6N70FA9H, SMC3407S, CS6N80A0H, SI9945AEY-T1-E3, 4N60, SI9945DY, CS6N90A8H, NCE2305A, NCE3007S, MTD6P10ET4, MMSF7P03HDR2G, CS730A8H, SPN3400S23RG

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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