All MOSFET. IRF640A Datasheet

 

IRF640A Datasheet and Replacement


   Type Designator: IRF640A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
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IRF640A Datasheet (PDF)

 ..1. Size:942K  samsung
irf640a.pdf pdf_icon

IRF640A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 8.1. Size:317K  1
irf640 irf640fi.pdf pdf_icon

IRF640A

 8.2. Size:109K  motorola
irf640.rev1.pdf pdf_icon

IRF640A

ClibPDF - www.fastio.comClibPDF - www.fastio.comClibPDF - www.fastio.com

 8.3. Size:155K  international rectifier
irf640n.pdf pdf_icon

IRF640A

PD - 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi

Datasheet: IRF632 , IRF633 , IRF634 , IRF634A , IRF634S , IRF635 , IRF636A , IRF640 , IRFZ46N , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , IRF644 , IRF644A .

History: NTMFS4833NT1G | SQD100N04-3M6L | TPG65R360M | SI2321DS | INJ0011AM1 | SFF70N10Z | SDU02N60

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