SI9945DY Specs and Replacement
Type Designator: SI9945DY
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SO8
SI9945DY substitution
- MOSFET ⓘ Cross-Reference Search
SI9945DY datasheet
si9945dy.pdf
SI9945DY www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel... See More ⇒
Detailed specifications: CS6N70B3D1-G, CS6N70CRHD, SI4946BEY-T1, CS6N70FA9H, SMC3407S, CS6N80A0H, SI9945AEY-T1-E3, SI9945BDY-T1, IRFP250, CS6N90A8H, NCE2305A, NCE3007S, MTD6P10ET4, MMSF7P03HDR2G, CS730A8H, SPN3400S23RG, CS730FA9H
Keywords - SI9945DY MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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