CS730A8H Datasheet and Replacement
Type Designator: CS730A8H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 72 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220AB
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CS730A8H Datasheet (PDF)
cs730a8rd.pdf

Silicon N-Channel Power MOSFET R CS730 A8RD General Description VDSS 400 V ID 6 A CS730 A8RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.75 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs730a4rd.pdf

Silicon N-Channel Power MOSFET R CS730 A4RD General Description VDSS 400 V ID 6 A CS730 A4RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs730a3rd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 20N03L-TO252 | 2N6762JTXV
Keywords - CS730A8H MOSFET datasheet
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History: 20N03L-TO252 | 2N6762JTXV



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